Correction to: Scientific Reports https://doi.org/10.1038/s41598-020-79560-z, published online 11 January 2021
The original version of this Article contained an error in the Results section, under the subheading ‘Temperature dependency’ where
“From Eq. (1) and the values obtained with the curve fit, the values of \({t}_{d}^{0}\) and Ed were determined to be respectively, 1 × 10−11 s and 17 kJ mol−1 (0.18 eV).”
now reads:
“From Eq. (1) and the values obtained with the curve fit, the values of \({t}_{d}^{0}\) and Ed were determined to be respectively, 1 × 10−11 s and 0.406 eV (39.1 kJ mol−1).”
The original Article has been corrected.
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Antoun, G., Tillocher, T., Lefaucheux, P. et al. Author Correction: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption. Sci Rep 12, 1979 (2022). https://doi.org/10.1038/s41598-022-06291-8
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DOI: https://doi.org/10.1038/s41598-022-06291-8
