Figure 6
From: Quantified density of performance-degrading near-interface traps in SiC MOSFETs
The fraction of electrons trapped for longer than \({\tau }_{min}\) at VG = 20 V.
Figure 6 | Scientific Reports
From: Quantified density of performance-degrading near-interface traps in SiC MOSFETs
The fraction of electrons trapped for longer than \({\tau }_{min}\) at VG = 20 V.
