Table 1 Device parameters of measured SiC MOSFETs.
From: Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Device Parameter | Manufacturer A | Manufacturer B |
|---|---|---|
Drain-to-source voltage, \({V}_{DS}\) (V) | 900 | 1200 |
Gate-to-source Voltage, \({V}_{GS}\) (V) | -4 to 15 | -10 to 25 |
Continuous drain current, \({I}_{D}\) (A) | 23 | 20 |
On-resistance, \({R}_{DS(on)}\)(mΩ) | 120 | 189 |
Gate area, \({A}_{G}\) (cm-2) | 1.29 × 10–2 | 1.89 × 10–2 |
Internal gate resistance, \({R}_{G}\) (Ω) | 13 | 7 |
