Table 1 Parameters of temperature-dependent bandgap.

From: Unusually large exciton binding energy in multilayered 2H-MoTe2

 

Si

Ge

GaAs

2H-MoTe2

Indirect

Direct (K-point)

Direct (Γ-point)

2 nm

4 nm

10 nm

2 nm

4 nm

10 nm

2 nm

4 nm

10 nm

Eg (0) [eV]

1.16656

0.74456

1.51956

0.993

0.980

0.943

1.505

1.438

1.373

2.188

2.174

2.126

α [10–4 eV/K]

4.7356

4.7756

5.4156

3.70

3.50

2.70

3.40

3.50

3.60

3.80

3.90

4.50

β [K]

63656

23556

20456

145

125

90.5

110

220

290

740

540

400

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