Table 1 1.06-µm InGaAs dqw laser with asymmetric heterostructure layers.

From: Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Material

Thickness (nm)

Doping (cm-3)

GaAs

250

p, ˃2e19

Al0.55Ga0.45As

300

p, 6e18

Al0.35Ga0.65As

300

p, 8e17

Al0.3Ga0.7As

300

p, 8e17

Al0.05Ga0.95As

200

p, 8e16

GaAs

8

Barrier

In0.2Ga0.8As

7

Quantum well

GaAs

8

Barrier

In0.2Ga0.8As

7

Quantum well

GaAs

8

Barrier

In0.03Ga0.97As0.95P0.05

200

Non-doped

In0.32Ga0.68As0.4P0.6

300

n, 8e16

In1−xGaxAs0.5P0.5

100

n, 8e17

In1−xGaxAs0.7P0.3

100

n, 8e17

In1−xGaxAs0.9P0.1

800

n, 8e17

GaAs

200

n, 2e18

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