Figure 1 | Scientific Reports

Figure 1

From: Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Figure 1

(a) Schematic drawing of the plasma-deposited DCS-based USRN film of ~ 400 nm thickness deposited at low temperature ~ 300 °C with DCS and N2 gas precursors. (b) Cross-sectional TEM image of the deposited DCS-based USRN film showing Au and Pt layers on the top, deposited due to TEM sample preparation by FIB-cut. Below the USRN film is a thermal SiO2 layer. High resolution TEM image is taken at the region marked by the blue circle. This close-up image did not reveal any lattice structure, indicating that the film is amorphous. An FFT analysis (inset) on the DCS-based USRN film further confirm that the film is amorphous as no distinct bright spot is observed. AFM measuring the surface roughness of DCS-based USRN film (c) before and (d) after CMP. Surface roughness rms is reduced from ~ 2.0 to ~ 0.4 nm by CMP.

Back to article page