Figure 1
From: Selective etching of silicon nitride over silicon oxide using ClF3/H2 remote plasma
Schematic drawing of a remote-type inductively coupled plasma (ICP) etcher. At the center of the chamber, double grids having multiple holes are installed to prevent an ion bombardment and to deliver radicals only to the substrate. During the process, the substrate temperature was controlled (RT ~ 500 °C) by a silicon carbide (SiC) heater located below the substrate.
