Figure 2
From: Selective etching of silicon nitride over silicon oxide using ClF3/H2 remote plasma
Etch characteristics of SiNx and SiOy (a) as a function of rf power for ClF3 remote plasma at RT, (b) as a function of substrate temperature for chemical etching with ClF3 gas flow only, and (c) as a function of substrate temperature for ClF3 remote plasma at 300 W of rf power. 200 sccm Ar (200 sccm) was added to ClF3 for plasma stability. (d) logarithm etch rates versus 1/T for ClF3 remote plasma etching of SiNx and SiOy in (c) for the extraction of the activation energies.
