Figure 10
From: OES diagnostics as a universal technique to control the Si etching structures profile in ICP
Dependences on the HF power of ICP in SF6/C4F8/O2: (a I) of δ and Z plasma; (a II) of the etching rate of silicon and aluminum; (a III) of the etch selectivity and the angle Θ; (b I–III) microphotographs of the etching window profiles at different HF power; (c) dependences of the emission intensity of fluorine lines (685.8 and 703.9 nm) and oxygen (778.1 nm) depending on the ICP HF power in SF6/C4F8/O2 plasma; (d) microphotographs of etched windows at different values of the ICP HF power in SF6/C4F8/O2 plasma to evaluate the structure overetching (δ).
