Figure 4
From: OES diagnostics as a universal technique to control the Si etching structures profile in ICP
Schematic of measurements of the inclination angle and “bowing effect” of the etched structure.
Figure 4 | Scientific Reports
From: OES diagnostics as a universal technique to control the Si etching structures profile in ICP
Schematic of measurements of the inclination angle and “bowing effect” of the etched structure.
