Figure 2
From: Graphene–oxide interface for optoelectronic synapse application
(a) Photocurrent measured across the top graphene layer as a function of time, when pulses of light (λ = 405 nm), of duration tON = 125 ms, tOFF = 125 ms, are incident on the device. (b) Photocurrent measured across top graphene layer as a function of time, with varying back gate voltage. (c) Photocurrent retained after withdrawal of light as a function of time, fitted with a double exponential, indicating a fast decay with time constant τ1 followed by a slow decay of current with a time constant of τ2. (d) Photocurrent as a function of time with varying light pulse width. VG = 80 V, VTGr = 0.1 V. (e) Retained photocurrent after light pulse withdrawal as a function of time from (d), fitted with a double exponential. (f) Photocurrent decay time constants τ1 and τ2, extracted from (e), as a function of pulse width.
