Figure 3

Measurement and modeling of stochastic RS of Ag₂S NW memristor. (a) IV characteristics of a 16 μm long Ag₂S NW stimulated first with four positive triangular pulses followed by four negative pulses (10 s period) showing OFF state (high resistance) at the negative bias and gradually reducing resistance in the ON state of the device. The inset IV plot showed spontaneous loop reversal when the wire was stimulated with alternating negative and positive triangular pulses with a 10 s period. The micrograph shows a single Ag₂S NW contacted by the nanomanipulator. (b) Current response to triangular voltage stimulation of the Ag₂S NW. (c) Time-lapse of the deformation caused by electromigration of Ag⁺ ions in the Ag₂S NW during the first 40 s of the triangular voltage stimulation. (d) Suboptimal simulation of the stochastic switching that replicates the behavior of the experimental data, with the proposed memristor model in Eqs. (3) to (6) and the parameters from Table 1. Inset in (d) shows spontaneous loop reversal. (e) Simulation of the RS with default parameters in Table 1 with zeroed noise parameter. All scale bars are 10 \(\upmu\)m long.