Figure 2
From: New fabrication method for di-indium tri-sulfuric (In2S3) thin films
(a–d). The XRD patterns of the grown thin film of In2S3 at pressure 100 Torr., and different temperatures (a) 500 °C, (b) 550 °C, (c) 600 °C, and (d) 650 °C.
Figure 2 | Scientific Reports
