Table 1 Parameter values used in the numerical simulations of a semiconductor laser with optical feedback.

From: Decision making for large-scale multi-armed bandit problems using bias control of chaotic temporal waveforms in semiconductor lasers

Symbol

Parameter

Value

GN

Gain coefficient

8.40 × 10−13 m3 s−1

N0

Carrier density at transparency

1.40 × 1024 m−3

Ï„p

Photon lifetime

1.927 × 10−12 s

Ï„s

Carrier lifetime

2.04 × 10−9 s

Ï„in

Round-trip time in internal cavity

8.0 × 10−12 s

α

Linewidth enhancement factor

3.0

ε

Gain saturation coefficient

2.5 × 10−23

r2

Reflectivity of laser facet

0.556

r3

Reflectivity of external mirror

0.036

κ = (1 − r22)r3/(r2τin)

Optical feedback strength

5.592 × 109 s−1

J/Jth

Normalized injection current

1.36

c

Speed of light

2.998 × 108 m s−1

L

External cavity length

0.3 m

τ = 2L/c

Round-trip time of light in external cavity

2.001 × 10−9 s

λ

Optical wavelength

1.537 × 10−6 m

ω = 2πc/λ

Optical angular frequency

1.226 × 1015 s−1

Nth = N0 + 1/(GNτp)

Carrier density at lasing threshold

2.018 × 1024 m−3

Jth = Nth/τs

Injection current at lasing threshold

9.891 × 1032 m−3 s−1

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