Figure 1

(a) Schematic structures of the cross-bar array architecture, (b) the cross-sectional TEM images, and (c) depth-profiling with ToF–SIMS of the SiOx and SiOx@TiO2 NPs resistive switching devices.

(a) Schematic structures of the cross-bar array architecture, (b) the cross-sectional TEM images, and (c) depth-profiling with ToF–SIMS of the SiOx and SiOx@TiO2 NPs resistive switching devices.