Figure 5 | Scientific Reports

Figure 5

From: Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

Figure 5

(a) Structural image of the SiOx, and (b) TiO2-x. (c) Defect states of the stable charge states of oxygen vacancies (VO) in SiOx, and (d) Fermi level-dependent formation energy of charge states of the VO defects in SiOx. (e) Defect state of the stable charge of VO in the SiOx@TiO2 NPs, and (f) Fermi level-dependent formation energy of the charge states of VO defects in the SiOx@TiO2 NPs.

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