Table 1 The parameters for CB simulations.

From: Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

Parameters

SiOx device

SiOx@TiO2 NPs device

M

30

30

N

90

90

Rlow,S [kohm]

20

20

Rhigh,S [kohm]

9800

9800

Rlow,T [kohm]

N/A

6

Rhigh,T [kohm]

N/A

8000

Initial ratio of

fRlow,S: Rhigh,S

35:65

35:65

Initial ratio of

Rlow,T: Rhigh,T

N/A

36:64

IC.C. [mA]

0.1

0.1

Simulated VSET [V]

− 1.7

− 1.1

Simulated VRESET [V]

2.0

First-RESET: 0.7

Second-RESET: 2.0