Table 1 The parameters for CB simulations.
Parameters | SiOx device | SiOx@TiO2 NPs device |
|---|---|---|
M | 30 | 30 |
N | 90 | 90 |
Rlow,S [kohm] | 20 | 20 |
Rhigh,S [kohm] | 9800 | 9800 |
Rlow,T [kohm] | N/A | 6 |
Rhigh,T [kohm] | N/A | 8000 |
Initial ratio of fRlow,S: Rhigh,S | 35:65 | 35:65 |
Initial ratio of Rlow,T: Rhigh,T | N/A | 36:64 |
IC.C. [mA] | 0.1 | 0.1 |
Simulated VSET [V] | − 1.7 | − 1.1 |
Simulated VRESET [V] | 2.0 | First-RESET: 0.7 Second-RESET: 2.0 |