Figure 3
From: Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices
Detailed analysis of the dynamic behavior of the simulated device. (a) The magnetization versus time under the stimulus of input spike sequence. (b) Leak time constant \(\tau\) versus the instantaneous \(V_{mem}\). Data points (blue squares) are extracted from the plot in (a), and numerically fitted by Eq. (3). (c) Normalized membrane resistance \(R_{mem}\) versus the instantaneous \(V_{mem}\). Data points (red dots) are extracted from the plot in (a), and numerically fitted by Eq. (4).
