Table 1 FIP detector parameters and performance comparison including: material composition and detector type, illumination wavelength, maximum modulation fmod and measurement frequency fmeas.max, number of required thin-film layers and encapsulation, bias tunability, and number of pixel required for 3D measurements.

From: High-speed nonlinear focus-induced photoresponse in amorphous silicon photodetectors for ultrasensitive 3D imaging applications

Material/device

λ

[nm]

\({f}_{mod}\)

[Hz]

\({f}_{meas, max}\)

[Hz]

Layer no

/Encapsulation

Bias

Tunable

Sensor

Count

Refs.

TiO2 based DSSC

530

965

965

6/yes

No

2

13

PbS/photo-conductor

1.550

606

606

N/A/yes

No

2

13

TiO2 based DSSC

730

/850

1.000

5/yes

No

2

14

BDP-OMe:C60 based

OPD

850

20.000

20.000

5/yes

No

2

18

a-Si:H/PIN photodiode

477

700.000

3.800.000

5/no

Yes

Single

Pixel

This

work