Table 1 FIP detector parameters and performance comparison including: material composition and detector type, illumination wavelength, maximum modulation fmod and measurement frequency fmeas.max, number of required thin-film layers and encapsulation, bias tunability, and number of pixel required for 3D measurements.
Material/device | λ [nm] | \({f}_{mod}\) [Hz] | \({f}_{meas, max}\) [Hz] | Layer no /Encapsulation | Bias Tunable | Sensor Count | Refs. |
|---|---|---|---|---|---|---|---|
TiO2 based DSSC | 530 | 965 | 965 | 6/yes | No | 2 | |
PbS/photo-conductor | 1.550 | 606 | 606 | N/A/yes | No | 2 | |
TiO2 based DSSC | 730 /850 | – | 1.000 | 5/yes | No | 2 | |
BDP-OMe:C60 based OPD | 850 | 20.000 | 20.000 | 5/yes | No | 2 | |
a-Si:H/PIN photodiode | 477 | 700.000 | 3.800.000 | 5/no | Yes | Single Pixel | This work |