Figure 8
From: High frequency resistive switching behavior of amorphous TiO2 and NiO

The two passive structures used in de-embedding; (a) Through standard, (b) Line standard, and (c) cross-section of passive devices.
From: High frequency resistive switching behavior of amorphous TiO2 and NiO

The two passive structures used in de-embedding; (a) Through standard, (b) Line standard, and (c) cross-section of passive devices.