Figure 1
From: Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
Depth profile of hydrogen density for specimens subjected to proton fluence of 1 × 1016 cm−2 measured by SIMS.
Figure 1 | Scientific Reports
From: Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
Depth profile of hydrogen density for specimens subjected to proton fluence of 1 × 1016 cm−2 measured by SIMS.
