Figure 3
From: Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
X-ray topography images of specimen without proton irradiation with different UV illumination times (a: 0 h, b: 1 h, c: 2 h, d: 4 h) with a power density of 10 W cm−2 at 373 K.
