Figure 4
From: Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
(a)–(f) X-ray topography images of specimens with proton irradiation fluence ranging from 1 × 1011 to 1 × 1013 cm−2 before and after UV illumination with power of 10 W cm−2 for 120 h and (g) schematic illustration of the shape of the SF shown in (f).
