Figure 6
From: Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
X-ray topography images of epitaxial layer with thickness of 5 µm, nitrogen concentration of 6 × 1015 cm−3, and 0.3-MeV proton irradiation at a fluence of 1 × 1015 cm−2 after annealing at 1973 K for 1 h. X-ray topography images were taken (a) before and (b) after UV illumination on the specimen with power of 10 W cm−2 at 373 K for 10 h.
