Figure 3
From: Electrical resistivity of polycrystalline graphene: effect of grain-boundary-induced strain fields

GB resistivity caused by electrostatic potential versus electron concentration at \(T=300\) K for effective charges \(e^{*}=0.3e\) (green line) and \(e^{*}=0.8e\) (red line). The GB misorientation angle is taken to be \(\theta =13.2^{\circ }\) (\(L=0.246\) nm, \(h=0.846\) nm, p=916). For comparison, the resistivity due to deformation potential (DP) scattering from Fig. 2 is shown by blue line.