Table 4 Comparison of the mean, the SDs, and the RSDs of the transfer characteristics and the memory performances of the single-layer ADG 1 T-DRAMs and the 3-D stacked ADG 1 T-DRAMs.
Single-layer ADG 1 T-DRAM | 3-D stacked ADG 1 T-DRAM | |||
|---|---|---|---|---|
Transfer Characteristics | Threshold voltage (Vth) | Mean | 1.002 V | 0.956 V |
SD | 15.9 mV | 6.5 mV | ||
RSD | 1.58% | 0.68% | ||
Subthreshold swing (SS) | Mean | 115.0 mv/dec | 114.2 mv/dec | |
SD | 5.96 mv/dec | 0.626 mv/dec | ||
RSD | 5.18% | 0.55% | ||
On-current (Ion) | Mean | 1.87 × 10−4 A/µm | 5.74 × 10−4 A/µm | |
SD | 1.45 × 10−5 A/µm | 2.49 × 10−5 A/µm | ||
RSD | 7.75% | 4.43% | ||
Off-current (Ioff) | Mean | 3.74 × 10−15 A/µm | 6.08 × 10−15 A/µm | |
SD | 4.89 × 10−15 A/µm | 1.825 × 10−16 A/µm | ||
RSD | 130.7% | 3.0% | ||
Memory performances | Sensing margin (SM) | Mean | 5.72 µA/µm | 17.4 µA/µm |
SD | 1.44 µA/µm | 2.54 µA/µm | ||
RSD | 25.2% | 14.6% | ||
Retention time (RT) | Mean | 212 ms | 200 ms | |
SD | 116 ms | 82 ms | ||
RSD | 54.7% | 41% |
