Table 1 Comparison of different GCs for the S-C-L bands demonstrated on various Si\(_3\)N\(_4\) platforms.
From: Highly efficient dual-level grating couplers for silicon nitride photonics
Si\(_3\)N\(_4\) Height (nm) | Simulations | Experiments | Notes | Ref | ||
|---|---|---|---|---|---|---|
CE (dB) | 1 dB-BW (nm) | CE (dB) | 1 dB-BW (nm) | |||
100 | − 3.8 | – | − 5 | 75 (3dB-BW) | Amorphous-Si-on-Si\(_3\)N\(_4\) dual-level GC | |
220 | − 2.28 | 57.7 | − 2.56 | 46.9 | Apodized bilayer GC | |
300 | − 0.48 | 45 | – | – | Bottom DBR+chirp generator algorithm | |
325 | − 1 | 54 | − 1.75 | 76.34 (3dB-BW) | Multilayer reflector+apodized GC | |
325 | − 1.3 | – | − 4.5 | 68 (3dB-BW) | Bottom DBR (10 layers) | |
400 | − 0.88 | 70 | – | – | Apodized GC+bottom Si grating reflector | |
400 | − 1 | 82 | − 1.3 | 80 | Si\(_3\)N\(_4\)-on-SOI dual-level GC | |
400 | − 3.9 | 67 | − 4.2 | 67 | Fully-etched trenches | |
400 | − 1.2 | – | − 2.6 | 53 | Bottom DBR | |
400 | − 2.32 | 102 | − 2.5 | 53 | Bottom DBR | |
400 | − 0.38 | 42 | − 1.24 | 39 | Bottom DBR+chirp generator algorithm | |
400 | − 1.13 | 75 | − 2.58 | 52 | Bottom DBR | |
400 | − 2.52 | – | − 5.1 | 60 | DUV-lithography (500nm resolution) | |
500 | − 0.5 | 33 | − 1.17 | 40 | Bottom DBR+chirp generator algorithm | |
500 | − 1.34 | 56 | − 2.29 | 49 | Bottom DBR | |
600 | − 0.66 | 22.3 | − 1.5 | 60 (3dB-BW) | Two-step staircase-shaped GC | |
600 | − 2.13 | 63 | − 2.5 | 65 | Si\(_3\)N\(_4\)-on-SOI dual-level GC | |
700 | − 2.8 | – | − 3.7 | 54 | One partial etching step | |
150 | − 0.75 | 57 | – | – | Dual level Si–Si\(_3\)N\(_4\) GC (this work) | – |
300 | − 0.7 | 31 | – | – | Dual level Si–Si\(_3\)N\(_4\) GC (this work) | – |
400 | − 0.39 | 28 | – | – | Dual level Si–Si\(_3\)N\(_4\) GC (this work) | – |
500 | − 0.39 | 21 | – | – | Dual level Si–Si\(_3\)N\(_4\) GC (this work) | – |
