Figure 1
From: Electrostatically-sprayed carbon electrodes for high performance organic complementary circuits
Configuration and transistor characteristics of p- and n-type OTFTs with carbon contact electrodes. (a) Device configuration of OTFTs with carbon contact electrodes, in which a single-crystalline thin film of either p-type C9–DNBDT–NW or n-type PhC2–BQQDI was employed as the OSC layer. (b) Schematics of electrostatic spray coating of a carbon suspension including graphite powder and carbon black. The carbon suspension was atomized by electrostatic repulsion due to the charging nozzle to which a high voltage of 10–13 kV was applied. The carbon was patterned on a target substrate through a CYTOP-coated stencil mask. (c) Transfer characteristics in the saturation regime (VD = − 30 V) and (d) output characteristics of a p-type OTFT including C9–DNBDT–NW as the OSC layer and carbon as the contact electrodes. (e) Polarized optical microscopy (POM) image of the p-type OTFT under cross-Nicol condition. (f) Transfer characteristics in the saturation regime (VD = 20 V) and (g) output characteristics of the n-type OTFT with PhC2–BQQDI as the OSC layer and carbon as the contact electrodes. (h) POM image of the n-type OTFT under cross-Nicol condition. The channel length (L) and width (W) of both OTFTs were 100 μm and 200 μm, respectively.
