Figure 1
From: Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls
Target structure and multi-scale scheme of device modeling. (a) A 3D view of the silicon (Si) double quantum dot (DQD) structure that resembles the physical one reported by Zajac et al. (Ref.10). Here the lateral confinement (along the [100] direction) is controlled with DC biases imposed on the top electrodes, while the vertical one (along the [010] direction) is naturally formed due to the band offset among silicon-germanium (SiGe) and Si layers. Since the structure is very long along the [001] direction, we use its 2D slice for device simulations assuming it is infinitely long along that direction (a lateral distribution of the static magnetic field \(B_Z\), generated from a horseshoe-shaped cobalt micromagnet, is shown in the inset). (b) The self-consistent loop of device simulations used to model spatial distributions of charge and potential. Here the charge distribution at a given potential distribution is obtained in two ways; the electronic structure simulation based on a parabolic effective mass model is used to get the density in Si layers where most of electrons reside, while the region of SiGe layers is treated with the physics of bulk semiconductors.
