Figure 4 | Scientific Reports

Figure 4

From: Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process

Figure 4The alt text for this image may have been generated using AI.

Cross-sectional field-emission scanning electron microscopy (FE-SEM) images of the trench pattern (aspect ratio of 25:1 with an opening size and a depth of 200 nm and 2.5 μm, respectively) after conducting SiO2 PE-ALD with (a) no inhibitor, (b) N2*, and (c) NH3*.

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