Table 1 GPC of SiO2 PE-ALD with various inhibition conditions and decreased ratio compared with the no inhibitor case.

From: Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process

Gas species

GPC (nm/cycle)

Decreased ratio (%)

No inhibitor

0.064

 

N2

0.039

39.1

NH3

0.026

59.4

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