Table 1 Fitting parameters of thermal boundary conductivity and thermal conductivity of the samples.

From: Structural measurement of electron-phonon coupling and electronic thermal transport across a metal-semiconductor interface

Substrate

Si

GaAs

Cr thickness [nm]

80

80

Method

Current work

Ref.

Current work

Ref.

\(\sigma _{TBC}\) (\(\times 10^8\) Wm\(^{-2}\)K\(^{-1}\))

1.1

2.029

0.5

–

\(k_s\) (Wm\(^{-1}\)K\(^{-1}\))

34 \(\pm 4.27 \%\)

14829

5.1 \(\pm 0.86 \%\)

5530

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