Figure 4
From: Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
(a) RF performance of the InAlN/GaN HEMT with a 50-nm gate length at Vgs = − 3 V and Vds = 10 V with fT/fmax = 140/215 GHz. (b) The fT and fmax as a function of Vgs.
Figure 4 | Scientific Reports
