Figure 9
From: Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
Extracted intrinsic transconductance (Gm) and intrinsic conductance (G0) as a function of Lg at Vgs = − 3 V and Vds = 10 V.
Figure 9 | Scientific Reports
From: Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
Extracted intrinsic transconductance (Gm) and intrinsic conductance (G0) as a function of Lg at Vgs = − 3 V and Vds = 10 V.
