Table 3 N ITO carrier concentration.
From: Active control of dielectric singularities in indium-tin-oxides hyperbolic metamaterials
HMM ITO-SiO2 | N carrier concentration [cm−3] |
|---|---|
1. ITO | 3.5·1020 |
2. ITO | 4.6·1020 |
3. ITO | 5.8·1020 |
4. ITO | 6.4·1020 |
5. ITO | 7.0·1020 |
6. ITO | 7.6·1020 |
7. ITO | 8.1·1020 |
8. ITO | 8.6·1020 |
9. ITO | 9.1·1020 |
10. ITO | 9.6·1020 |
