Figure 2

(a) I–V curves of sweeps in dark (black line) and light (red line) states for memristor devices based MFC composite. An excellent enhancement of the memristive performance of device was observed under light illumination. Inset: Log–log plot of sweeps from (a) which show an Ohmic I–V behavior in the low bias region of both set and reset states. By increasing the bias, the SCLC transport remains the dominant mechanism of device. (b) Time evolution of current in − 5 V and the light illumination of 20 mW cm⁻², denoting the states of programming and erasing with and without illumination, respectively. (c) the pulse-switching characteristics of the MFC-based optical memristor under a negative and positive bias. d) The photo-response dynamics of the MFC-based optical memristor under − 5 and − 10 V bias voltages with a power intensity of 20 mW cm⁻² in three operation cycles. (e) The corresponding rise and fall time under − 5 and − 10 V bias voltages. (f) Current–Time curve of photo-response as a function of light intensity at – 5 V bias in a single operation cycle.