Figure 4
From: Improvement of the signal to noise ratio for fluorescent imaging in microfluidic chips
(A) Image of the conventional Si surface after etching using dark field microscopy with a 20 × objective lens. (B) Interference image of SOI (top) and standard Si (bottom) wafer chips using VSI mode. The images were processed using the auto-scale mode, with the SOI having a total scale of = 24 nm, while the conventional Si chip has a total scale = of 2.01 µm—thus = 84 × greater. (C) PMT voltage as a function of fluorescein concentration with the type of chamber material as a parameter using logarithmic scales for both axes; red is conventional Si substrate and black is SOI-based substrate.
