Table 1 Device parameters for ternary device modeling, where A* is the Richardson constant and NA and ND are the charge concentrations of the semiconductors.
Parameters | EOT [nm] | Vdd [V] | T [K] | W [μm] | L [μm] | A [cm2] | A* [A/cm2K2] | NA, ND [cm−3] | RC W [MΩ cm] | ||
|---|---|---|---|---|---|---|---|---|---|---|---|
Intermediate state | On-state | ||||||||||
p-type | 1 | 1 | 300 | 200 | 300 | 6 × 10−4 | 120 | 1 × 1016 | 22 × 101 | 1.6 × 10−1 | |
n-type | 30 | 15 | 4.5 × 10−6 | 34 | 1 × 1018 | 3.3 | 2.4 × 10−3 | ||||
