Table 1 Details of the simulation parameters.15
From: Physics inspired compact modelling of \(\hbox {BiFeO}_3\) based memristors
Physical quantity | Symbol | Value |
|---|---|---|
Temperature (K) | T | 298 |
Phonon frequency (Hz) | \(\nu _{0}\) | \(1 \times 10^{12}\) |
Lattice constant (m) | d | \(0.56 \times 10^{-9}\) |
Device area (\(\mathrm {mm}^{2}\)) | \(A_\mathrm{d}\) | 0.04 |
Relative permittivity of \(\mathrm {BiFeO}_{3}\) | \(\varepsilon _{r}\) | 52.0 |
Conductivity of \(\mathrm {BiFeO}_{3}\) (\(\Omega \mathrm{m}\)) | \(\sigma\) | \(7.0 \times 10^{-4}\) |
Length of BFO (m) | \(l_\mathrm{BFO}\) | \(600 \times 10^{-9}\) |
Defect density (\(\mathrm{cm^{-3}}\)) | \(\rho\) | \(2\times 10^{16}\) |
Top Schottky barrier height (eV) | \(\Phi ^\mathrm{t}_\mathrm{0}\) | 0.8 |
Top Schottky barrier ideality factor | \(n_{0}^\mathrm{t}\) | 4.2 |
Bottom Schottky barrier height (eV) | \(\Phi ^\mathrm{b}_\mathrm{0}\) | 0.85 |
Bottom Schottky barrier ideality factor | \(n_{0}^\mathrm{b}\) | 4.5 |
