Table 2 Atomic percentage of the HEA elements in the cathode and thin films deposited with various substrate bias.

From: The fabrication and growth mechanism of AlCrFeCoNiCu0.5 HEA thin films by substrate-biased cathodic arc deposition

 

Al

Cr

Fe

Co

Ni

Cu

Stoichiometric cathode at%

18.2

18.2

18.2

18.2

18.2

9.0

Thin film (0 V) at%

6.7 ± 0.7

24.2 ± 4.1

22.0 ± 3.7

20.4 ± 3.5

18.2 ± 3.3

8.5 ± 1.5

Thin film (−50 V)at%

5.7 ± 0.6

21.7 ± 3.7

22.5 ± 3.8

22.1 ± 3.7

19.7 ± 3.3

8.3 ± 1.4

Thin film (−100 V) at%

6.7 ± 0.5

23.5 ± 4.0

22.1 ± 3.8

20.8 ± 3.6

18.4 ± 3.3

8.4 ± 1.5

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