Figure 3
From: Semiconductor–metal transition in Bi2Se3 caused by impurity doping
(a) Schematic configuration for Hall effect measurement. Temperature dependence of (b) sheet resistance, (c) electron density per unit area, and (d) Hall mobility. Red and blue data were obtained from the devices with 100 and 82 nm thickness, respectively. The data in (c) from the device with 82 nm thickness was used in our previous report19. (e) Temperature dependence of bulk carrier density normalized by the value at zero temperature. The data at the semiconducting state (\(T\ge\) 35 K) are shown.
