Figure 1
From: High-temperature operation of gallium oxide memristors up to 600 K
(a) Cross-sectional schematic of fabricated Pt/GaOx/ITO memristor. RHEED patterns of surfaces of (b) ITO and (c) post-deposition Sample G05. XPS spectra of (d) Ga3d and (e) O1s, and (f) the O/Ga ratio as a function of PAr during PLD.
