Figure 2 | Scientific Reports

Figure 2

From: High-temperature operation of gallium oxide memristors up to 600 K

Figure 2

I–V curves obtained at room temperature for Samples (a) G05, (b) G10, and (c) G15. (d) Measured resistivity of the GaOx films before switching the resistance at the HRS and the LRS depending on PAr during PLD. (e) Schematics of oxygen vacancy distribution in the memristor corresponding to the situation of the voltage sweep through Regions 1–4.

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