Table 2 Input optimization parameters of TCO, ETL, and absorber layer of the study ^56,57.

Thickness (nm)

500

30

50

50

50

30

100

100

100

800*

Band gap, E_g (eV

3.5

3.2

2

3.3

1.7

3.05

3.6

1.8

3.5

1.52

Electron affinity, X (eV)

4

4

3.9

4

3.9

4.16

4

3.95

4.6

3.90

Dielectric permittivity (relative), ε_r

9

9

3.9

9

4.2

10

9

13.6

9

29.4

CB effective density of states, N_C (1/cm³)

2.2 × 10¹⁸

2 × 10¹⁸

2.5 × 10²¹

3.7 × 10¹⁸

8.0 × 10¹⁹

5 × 10¹⁸

2.2 × 10¹⁸

1 × 10¹⁸

1 × 10²⁰

1 × 10¹⁹

VB effective density of states, N_V (1/cm³)

1.8 × 10¹⁹

1.8 × 10¹⁹

2.5 × 10²¹

1.8 × 10¹⁹

8.0 × 10¹⁹

5 × 10¹⁸

1.8 × 10¹⁹

2.4 × 10¹⁹

2 × 10²¹

1 × 10¹⁹

Electron mobility, µ_n (cm²/Vs)

20

20

0.2

100

8.0 × 10⁻²

15

100

100

100

2

Hole mobility, µ_h (cm²/Vs)

10

10

0.2

25

3.5 × 10⁻³

0.1

25

100

25

2

Shallow uniform acceptor density, N_A (1/cm³)

0

0

0

0

0

0

0

0

0

1 × 10¹⁵*

Shallow uniform donor density, N_D (1/cm³)

1 × 10²¹

9 × 10¹⁶

2.93 × 10¹⁷

1 × 10¹⁸

1 × 10¹⁷

1 × 10¹⁷

1 × 10¹⁷

1 × 10¹⁸

10²¹

0*

Defect density, N_t (1/cm³)

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*