Table 3 Input optimization parameters HTL the study⁵⁶.

Thickness (nm)

50

50

50

50

50

200

100

100

50

100

100

100

Band gap, Eg (eV)

2.2

3.6

1.58

1.7

1.6

3

3.8

3.1

1.51

2.20

1.3

1.9

Electron affinity, Χ (eV)

3.4

1.7

4.2

3.5

3.4

2.2

1.46

2.1

4.07

4.00

3.3

3.6

Dielectric permittivity (relative), εr

7.5

10

14.6

3

3

3

10.7

6.5

18.1

10.00

9

5.4

CB effective density of states, NC (1/cm³)

2 × 10¹⁹

2.2 × 10¹⁹

2 × 10¹⁸

2 × 10²¹

2.2 × 10¹⁸

2.2 × 10¹⁸

2.8 × 10¹⁹

2.8 × 10¹⁹

2.2 × 10¹⁹

9.2 × 10¹⁷

2.2 × 10¹⁸

2.2 × 10¹⁸

VB effective density of states, NV (1/cm³)

1 × 10¹⁹

1.8 × 10¹⁸

1 × 10¹

2 × 10²¹

1.8 × 10¹⁹

1.8 × 10¹⁹

1 × 10¹⁹

1 × 10¹⁹

5.5 × 10²⁰

5.0 × 10¹⁸

1.8 × 10¹⁹

1.8 × 10¹⁹

Electron mobility, µn (cm²/Vs)

200

100

49

1.8 × 10⁻³

4.5 × 10^–2

2.1 × 10^–3

12

100

100

3.2 × 10²

21.98

30

Hole mobility, µh (cm²/Vs)

8600

25

49

1.86 × 10⁻²

4.5 × 10^–2

2.16 × 10^–3

2.8

43.9

0.1

4.0 × 10¹

21.98

10

Shallow uniform acceptor density, N_A (1/cm³)

1 × 10¹⁸

1 × 10¹⁸

1 × 10¹⁸

1 × 10¹⁸

1 × 10¹⁸

1.0 × 10¹⁸

1 × 10¹⁸

1.0 × 10¹⁸

1 × 10¹⁸

1 × 10¹⁸

1 × 10¹⁸

1 × 10¹⁸

Shallow uniform donor density, N_D (1/cm³)

0

0

0

0

0

0

0

0

0

0

0

0

Defect density, N_t (1/cm³)

1.0 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1.0 × 10¹⁵*

1 × 10¹⁵*

1.0 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*

1 × 10¹⁵*