Figure 1
From: Using machine learning with optical profilometry for GaN wafer screening
(A) To-scale images of the devices used in this study. The blue area represents the anode, the green area represents the guard ring/JTE hybrid termination with an implant isolation layer at the edge, and the orange ring represents the trench isolation region. The areas for the devices are as follows: (A)-0.116 × 10–2 cm−2, (B)-0.227 × 10–2 cm−2, (C)-0.338 × 10–2 cm−2, (D)-0.499 × 10–2 cm−2, (E)-0.560 × 10–2 cm−2, (F) (both rectangle and square)-1.11 × 10–2 cm-2, (R)-0.0911 × 10–2 cm−2. (B) Side view of vertical diode with center at the left (not drawn to scale).
