Figure 6
From: Damage-free LED lithography for atomically thin 2D material devices

GO devices fabricated by the LED lithography. (a) GO FET. (b) r-GO FET. (c) Transfer curves measured from GO and r-GO FET devices at room temperature.
From: Damage-free LED lithography for atomically thin 2D material devices

GO devices fabricated by the LED lithography. (a) GO FET. (b) r-GO FET. (c) Transfer curves measured from GO and r-GO FET devices at room temperature.