Figure 1 | Scientific Reports

Figure 1

From: Electrical and thermal characterisation of liquid metal thin-film Ga\(_2\)O\(_3\)–SiO\(_2\) heterostructures

Figure 1

(a) Schematic of the exfoliation method - a liquid gallium droplet is isolated and its passivation oxide is directly transferred onto a substrate. (b) Microscope image of the Ga\(_2\)O\(_3\) film deposited on thermally oxidised Si substrate after annealing at 250\(^{\circ }\)C for 1 hour. (c) Atomic Force Microscopy linescans taken across thin-film oxide to substrate edges in two different areas.

Back to article page