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Figure 1

From: Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques

Figure 1

Statistical analysis of copper oxide-based RS devices. Bar plot of (a) type of materials used to fabricate RS layer and (b) synthesis methods used to deposit switching layer. Bar plot of types of (c) TE and (d) BE used to fabricate RS devices and their respective counts. (e) Thickness variation in TE, BE, and SL. Distribution of (f) switching voltages (VSET and VRESET) and (g) endurance, retention, and memory window properties of RS devices. Bar plot of (h) type of resistive switching and (i) possible conduction and resistive switching mechanisms of RS devices.

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