Figure 4 | Scientific Reports

Figure 4

From: Electron–phonon interaction toward engineering carrier mobility of periodic edge structured graphene nanoribbons

Figure 4

(a) Growth rate of the GNRs along with different orientations along Ge[110] under 1.4 s.c.c.m., 1.3 s.c.c.m., 1.2 s.c.c.m., 1.1 s.c.c.m., 0.75 s.c.c.m., and 0 s.c.c.m. CH4 conditions. (b) SEM images after regrowth the graphene dots with 1.1 s.c.c.m. and 0.75 s.c.c.m. CH4 precursor. (c) The schematic diagram of the etching and growth of graphene dots along with armchair and zigzag edges. (d) Etching rate of the GNRs along with different angles under 0 s.c.c.m. CH4 condition.

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